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Thermionic Emission at Metal-Semiconductor Interfaces L1-495

Semiconductor PhysicsSchottky barrier transportδ=3 · standardL_DAG = 3.1📋 Stub — not mineable
📋

Unclaimed Principle — open for contribution

This Principle is declared in the catalog but has no reference solver, no pinned dataset, and is not registered on-chain. There is no reward pool. Submitting a cert against this Principle today will record the cert for reproducibility but pay zero PWM.

To claim it as a Bounty #7 contribution: open a PR adding (1) a reference solver, (2) ≥1 dataset pinned to IPFS, (3) updates to the L3 manifest with dataset CIDs. After verifier-agent triple-review, the founders' 3-of-5 multisig signs PWMRegistry.register() and the Principle becomes mineable.

Forward model E

J = A\cdot \cdot T^2 \cdot exp(-q\cdot phi_B_eff/(k_B\cdot T)) \cdot (exp(q\cdot V/(n\cdot k_B\cdot T)) - 1); phi_B_eff = phi_B0 - Delta_phi(E_surface)

Richardson-Dushman thermionic current: J_s = A* T^2 exp(-q*phi_B/k_B*T); combined with tunneling (field-enhanced) for modern Schottky contacts.

L-DAG

E.richardson_emission -> E.barrier_lowering -> D.time -> O.IV_vs_T
E.richardson_emissionE.barrier_loweringD.timeO.IV_vs_T

Well-posedness W

Existence:
true
Uniqueness:
true
Stability:
conditional
κ:
80

Well-posed away from breakdown; inversion of (phi_B, A*) ambiguous at single T — requires T-series.

Solvability C

Solver class:
Richardson plot (log(J_s/T^2) vs 1/T); Bayesian joint fit across T
Convergence rate q:
2
Complexity:
O(N_bias * N_T)

Specs (0)

No L2 specs registered yet for this principle.