Solar Cell Device Physics (Shockley-Queisser + drift-diffusion) L1-493

Semiconductor PhysicsPhotovoltaic devicesδ=3 · standardL_DAG = 3.4📋 Stub — not mineable

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Unclaimed Principle — open for contribution

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Forward model E

J (V) = J_{p} h - J_{0} \cdot (e x p ((V + J \cdot R_{s}) / (n \cdot V_{T})) - 1) - (V + J \cdot R_{s}) / R_{s} h; J_{p} h = q \cdot in t e g r a l a l p ha (λ) \cdot P hi (λ) d λ

Photovoltaic cell as drift-diffusion device with photogeneration G(x,lambda); one-diode or two-diode compact model with parasitic R_s, R_sh; efficiency bounded by Shockley-Queisser.

L-DAG

E.photogeneration -> E.drift_diffusion -> E.diode_model -> O.JV

E.photogenerationE.drift_diffusionE.diode_modelO.JV

Well-posedness W

Existence:: true
Uniqueness:: true
Stability:: conditional
κ:: 150

Well-posed for typical parameter ranges; ideality/shunt trade-off creates mild non-uniqueness at low bias.

Solvability C

Solver class:: One-diode LM fit; full-physics TCAD for absorbed layer analysis
Convergence rate q:: 2
Complexity:: O(N_bias)

Specs (0)

No L2 specs registered yet for this principle.