BSIM Compact MOSFET Model L1-492

Semiconductor PhysicsCompact device modelingδ=3 · standardL_DAG = 3.2📋 Stub — not mineable

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Unclaimed Principle — open for contribution

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Forward model E

I_{d} s = (W / L) \cdot m u_{e} f f \cdot C_{o} x \cdot V_{e} f f \cdot (V_{g} s - V_{t} h - V_{e} f f /2) \cdot (1 + λ \cdot V_{d} s) \cdot ... w i t h 200 + p h y s i c a l p a r am e t er s

Berkeley Short-channel IGFET Model (BSIM 6/BSIM-CMG): closed-form I-V, C-V, and noise for planar and FinFET devices; smooth interpolation across subthreshold, triode, saturation.

L-DAG

E.threshold_model -> E.mobility_model -> K.filter -> O.IV

E.threshold_modelE.mobility_modelK.filterO.IV

Well-posedness W

Existence:: true
Uniqueness:: true
Stability:: conditional
κ:: 100

Parameter-rich (>100 fitting knobs); non-unique locally; regularized fits required.

Solvability C

Solver class:: Levenberg-Marquardt with multi-sweep cost; global-local hybrid with physics-aware priors
Convergence rate q:: 2
Complexity:: O(N_measurements * N_params)

Specs (0)

No L2 specs registered yet for this principle.